DPG60IM300PC low loss and soft recovery high performance fast recovery diode single diode hiperfred2 2/4 1 3 part number DPG60IM300PC backside: cathode fav rr tns 35 rrm 60 300 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) to-263 (d2pak) industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60IM300PC n s 3.5 a t vj =c reverse recovery time a 9 35 65 n s i rm max. reverse recovery current i f =a; 60 25 t=125c vj -di f =a/s 200 /dt t rr v r =v 200 t vj =c 25 t=125c vj v = v symbol definition ratings typ. max. i r v i a v f 1.43 r 0.45 k/ w r min. 60 v rsm v 1 t = 25c vj t = c vj m a 0.35 v = v r t = 25c vj i = a f v t = c c 135 p tot 335 w t = 25c c r k/ w 60 300 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions uni t 1.78 t = 25c vj 150 v f0 v 0.69 t = c vj 175 r f 6.4 m ? threshold voltage slope resistance for power loss calculation only a 150 v rrm v 300 max. repetitive reverse blocking voltage t = 25c vj c j 80 j unction capacitance v = v 150 t = 25c f = 1 mhz r vj p f i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 175 550 a 300 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 300 0.25 ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60IM300PC 1) i rms is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). in case of (1) and a pr oduct with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. ratings product m a r k i n g date code part no. logo assembly code xxxxxxxxx ixys zyyww 000000 assembly line d p g 60 im 300 pc part number diode hiperfred extreme fast single diode to-263ab (d2pak) (2) = = = current rating [a] reverse voltage [v] = = = = package t op c t vj c 175 virtual junction temperature -55 weight g 2 symbol definition typ. max. min. conditions operation temperature unit f c n 60 mounting force with clip 20 i rms rms current 35 a per terminal 150 -55 to-263 ( d2pak ) similar part package voltage class dpg60i300ha to-247ad (2) 300 delivery mode quantity code no. part number marking on product ordering 1 ) DPG60IM300PC 502404 tape & reel 800 DPG60IM300PC standard t stg c 150 storage temperature -55 threshold voltage v 0.69 m ? v 0 max r 0 max slope resistance * 3.2 equivalent circuits for simulation t = vj i v 0 r 0 fast diode 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60IM300PC w c2 a a1 c l e 2x e l1 d 3 2 1 3.81 (0.150) 1.78 (0.07) 2.54 (0.100) 3.05 (0.120) 10.92 (0.430) 9.02 (0.355) mm (inches) recommended min. foot print 3x b2 e1 2x b h d1 supplier option l2 4 minmaxminmax a 4.06 4.83 0.160 0.190 a1 a2 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 d 8.38 9.40 0.330 0.370 d1 8.00 8.89 0.315 0.350 d2 e 9.65 10.41 0.380 0.410 e1 6.22 8.50 0.245 0.335 e e1 h 14.61 15.88 0.575 0.625 l 1.78 2.79 0.070 0.110 l1 1.02 1.68 0.040 0.066 w typ. 0.02 0.040 typ. 0.0008 0.002 dim. millimeter inches typ. 0.10 typ. 0.004 2.41 0.095 0.098 4.28 0.169 all dimensions conform with and/or within jedec standard. 2,54 bsc 0,100 bsc 2.5 2/4 1 3 outlines to-263 (d2pak) ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60IM300PC 0.0 0.4 0.8 1.2 1.6 2.0 20 40 60 80 100 120 0 200 400 600 40 50 60 70 80 10 0 10 1 10 2 10 3 10 4 0.1 1.0 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj [c] -di f /dt [a/ s] t[ms] 0200400600 200 300 400 500 600 700 800 900 1000 2 3 4 5 6 7 8 9 10 0 200 400 600 4 6 8 10 12 14 16 18 20 0 200 400 600 0.2 0.3 0.4 0.5 0.6 0.7 q rr [ c] v f i d - ] v [ f /dt [a/ s] z thjc [k/w] i rm q rr v fr t fr t vj = 150c fig. 1 forward current i f versus v f fig. 2 typ. reverse recov. charge q rr versus -di f /dt fig. 3 typ. reverse recovery current i rm versus -di f /dt fig. 4 typ. dynamic parameters q rr ,i rm versus t vj fig. 5 typ. reverse recov. time t rr versus -di f /dt fig. 6 typ. forward recovery voltage v fr & time t fr versus di f /dt fig. 8 transient thermal impedance junction to case 25c i f [a] -di f /dt [a/ s] i rm [a] t rr [ns] -di f /dt [a/ s] t fr [ns] v fr [v] 0 200 400 600 2 4 6 8 10 12 14 16 e rec [ j] -di f /dt [a/ s] fig. 7 typ. recovery energy e rec versus -di f /dt i f = 120 a 60 a 30 a i f = 120 a 60 a 30 a i f = 120 a 60 a 30 a i f = 120 a 60 a 30 a t vj =125c v r = 200 v t vj =125c v r = 200 v t vj = 125c v r = 200 v i f = 60 a t vj =125c v r = 200 v t vj = 125c v r = 200 v fast diode ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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